Tri-layer semiconductor stacks for patterning features on solar cells

ABSTRACT

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

TECHNICAL FIELD

Embodiments of the present disclosure are in the field of renewableenergy and, in particular, methods of fabricating soar cells, and, theresulting solar cells.

BACKGROUND

Photovoltaic cells, commonly known as solar cells, are well knowndevices for direct conversion of solar radiation into electrical energy.Generally, solar cells are fabricated on a semiconductor wafer orsubstrate using semiconductor processing techniques to form a p-njunction near a surface of the substrate. Solar radiation impinging onthe surface of, and entering into, the substrate creates electron andhole pairs in the bulk of the substrate. The electron and hole pairsmigrate to p-doped and n-doped regions in the substrate, therebygenerating a voltage differential between the doped regions. The dopedregions are connected to conductive regions on the solar cell to directan electrical current from the cell to an external circuit coupledthereto.

Efficiency is an important characteristic of a solar cell as it isdirectly related to the capability of the solar cell to generate power.Likewise, efficiency in producing solar cells is directly related to thecost effectiveness of such solar cells. Accordingly, techniques forincreasing the efficiency of solar cells, or techniques for increasingthe efficiency in the manufacture of solar cells, are generallydesirable. Some embodiments of the present disclosure allow forincreased solar cell manufacture efficiency by providing novel processesfor fabricating solar cell structures. Some embodiments of the presentdisclosure allow for increased solar cell efficiency by providing novelsolar cell structures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a solar cell having asingle semiconductor layer emitter region.

FIG. 1B illustrates a cross-sectional view of a solar cell having astack of two semiconductor layers for an emitter region.

FIG. 1C illustrates a cross-sectional view of a solar cell having astack of three semiconductor layers for an emitter region, in accordancewith an embodiment of the present disclosure.

FIG. 2 is a flowchart listing, operations in a method of fabricating asolar cell, in accordance with an embodiment of the present disclosure.

FIGS. 3A-3G and 3G′ illustrate cross-sectional views of various stagesin the fabrication of a solar cell, is corresponding to the flowchart ofFIG. 2, in accordance with an embodiment of the present disclosure.

FIG. 4 illustrates a cross-sectional view of a portion of a back contactsolar cell having structurally differentiated semiconductor regions, inaccordance with an embodiment of the present disclosure.

FIGS. 5A-5C illustrate cross-sectional views of various processingoperations in a method of fabricating a solar cell, in accordance withembodiment of the present disclosure.

DETAILED DESCRIPTION

The following detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. As used herein, the word“exemplary” means “serving as an example, instance, or illustration.”Any implementation described herein as exemplary is not necessarily tobe construed as preferred or advantageous over other implementations.Furthermore, there is no intention to be bound by any expressed orimplied theory presented in the preceding technical field, background,brief summary or the following detailed description.

This specification includes references to “one embodiment” or “anembodiment.” The appearances of the phrases “in one embodiment” or “inan embodiment” do not necessarily refer to the same embodiment.Particular features, structures, or characteristics may be combined inany suitable manner consistent with this disclosure.

“Terminology.” The following paragraphs provide definitions and/orcontext for terms found in this disclosure (including the appendedclaims):

“Comprising.” This term is open-ended. As used in the appended claims,this term does not foreclose additional structure or steps.

“Configured To.” Various units or components may be described or claimedas “configured to” perform a task or tasks. In such contexts,“configured to” is used to connote structure by indicating that theunits/components include structure that performs those task or tasksduring operation. As such, the unit/component can be said to beconfigured to perform the task even when the specified unit/component isnot currently operational (e.g., is not on/active). Reciting that aunit/circuit/component is “configured to” perform one or more tasks isexpressly intended not to invoke 35 U.S.C. § 112, sixth paragraph, forthat unit/component.

“First,” “Second,” etc. As used herein, these terms are used as labelsfor nouns that they precede, and do not imply an type of ordering (e.g.,spatial, temporal, logical, etc.). For example, reference to a “first”solar cell does not necessarily imply that this solar cell is the firstsolar cell in a sequence; instead the term “first” is used todifferentiate this solar cell from another solar cell (e.g., a “second”solar cell).

“Coupled”—The following description refers to elements or nodes orfeatures being “coupled” together. As used herein, unless expresslystated otherwise, “coupled” means that one element/node/feature isdirectly or indirectly joined to (or directly or indirectly communicateswith) another element/node/feature, and not necessarily mechanically.

In addition, certain terminology may also be used in the followingdescription for the purpose of reference only, and thus are not intendedto be limiting. For example, terms such as “upper”, “lower”, “above”,and “below” refer to directions in the drawings to which reference ismade. Terms such as “front”, “back”, “rear”, “side”, “outboard”, and“inboard” describe the orientation and/or location of portions of thecomponent within a consistent but arbitrary frame of reference which ismade clear by reference to the text and the associated drawingsdescribing the component under discussion. Such terminology may includethe words specifically mentioned ahoy derivatives thereof, and words ofsimilar import.

“Inhibit”—As used herein, inhibit is used to describe a reducing orminimizing effect. When a component or feature is described asinhibiting an action, motion, or condition it may completely prevent theresult or outcome or future state completely. Additionally, “inhibit”can also refer to a reduction or lessening of the outcome, performance,and/or effect which might otherwise occur. Accordingly, when acomponent, element, or feature is referred to as inhibiting a result orstate, it need not completely prevent or eliminate the result or state.

Tri-layer semiconductor stacks for patterning features on solar cells,and the resulting solar cells, are described herein. In the followingdescription, numerous specific details are set forth, such as specificprocess flow operations, in order to provide a thorough understanding ofembodiments of the present disclosure. It will be apparent to oneskilled in the art that embodiments of the present disclosure may bepracticed without these specific details. In other instances, well-knownfabrication techniques, such as lithography and patterning techniques,are not described in detail in order to not unnecessarily obscureembodiments of the present disclosure. Furthermore, it is to beunderstood that the various embodiments shown in the figures areillustrative representations and are not necessarily drawn to scale.

Disclosed here are solar cells. In one embodiment, a solar cell includesa substrate. A semiconductor structure is disposed above the substrate.The semiconductor structure includes a P-type semiconductor layerdisposed directly on a first semiconductor layer. A third semiconductorlayer is disposed directly on the P-type semiconductor layer. Anoutermost edge of the third semiconductor layer is laterally recessedfrom an outermost edge of the first semiconductor layer by a width. Anoutermost edge of the P-type semiconductor layer is sloped from theoutermost edge of the first semiconductor layer to the outermost edge ofthe third semiconductor layer. A conductive contact structure iselectrically connected to the semiconductor structure.

In another embodiment, a solar cell includes a substrate. Asemiconductor structure is disposed above the substrate. Thesemiconductor structure includes a second semiconductor layer disposeddirectly on a first semiconductor layer. A third semiconductor layer isdisposed directly on the second semiconductor layer. An outermost edgeof the third semiconductor layer has a non-reentrant profile. Anoutermost edge of the second semiconductor layer has a non-reentrantprofile extending beyond the outermost edge of the third semiconductorlayer by a width. An outermost edge of the first semiconductor layer hasa non-reentrant profile and does not undercut the second semiconductorlayer. The non-reentrant profiles of the first and third semiconductorlayers are steeper than the non-reentrant profile of the secondsemiconductor layer. A conductive contact structure electricallyconnected to the semiconductor structure.

Also, disclosed herein are methods of fabricating solar cells. In oneembodiment, a method of fabricating a solar cell includes forming afirst semiconductor layer above a substrate. The method also includesforming a P-type semiconductor layer directly on the first semiconductorlayer. The method also includes forming a third semiconductor layerdirectly on the P-type semiconductor layer. The method also includesforming a mask layer directly on the third semiconductor layer. Themethod also includes patterning the mask layer. The method also includesetching the third semiconductor layer, the P-type semiconductor layer,and the first semiconductor layer to provide a semiconductor structurehaving an outermost edge of the third semiconductor layer laterallyrecessed front an outermost edge of the first semiconductor layer by awidth. An outermost edge of the P-type semiconductor layer is slopedfrom the outermost edge of the first semiconductor layer to theoutermost edge of the third semiconductor layer.

In accordance with one or more embodiments described herein, a threelayer semiconductor film stack is implemented in solar cellmanufacturing to avoid overhang associated with selective etchingprocesses.

Previous approaches have included a single semiconductor layer for anemitter region of a solar cell. As an example, FIG. 1A illustrates across-sectional view of a solar cell having a single semiconductor layeremitter region. Referring to FIG. 1A, a portion of a solar cell includesa substrate 102. A single semiconductor layer 104 is disposed above thesubstrate 102, e.g., on a thin dielectric layer 106 formed on thesubstrate 102. A mask layer 108 is disposed on the single semiconductorlayer 106. Following a patterning and wet etching process, the singlesemiconductor layer 104 undercuts mask 108 and, perhaps mostsignificantly, creates an overhang region 110 above the substrate 102.Such an overhand region 110 may prove problematic in subsequentprocessing operations.

In another previous approach, a two-layer region is used to keep dopantsaway from the tunneling dielectric layer. As an example, FIG. 1Billustrates a cross-sectional view of a solar, cell having a stack oftwo semiconductor layers for an emitter region. Referring to FIG. 1B, aportion of a solar cell includes a substrate 122. Two semiconductorlayers 124 and 125 are disposed above the substrate 122, e.g., on a thindielectric layer 126 formed on the substrate 122. The lower layer 124may be undoped or lightly doped to hinder dopant poisoning of the thindielectric layer 126. A mask layer 128 is disposed on the uppersemiconductor liner 125. Following a patterning and wet etching process,the semiconductor layers 124 and 125 undercut mask 128 and, perhaps mostsignificantly, create an overhang region 130. Furthermore, the lowersemiconductor layer 124 undercuts the upper semiconductor layer 125.Such an overhand region 130 and lower layer undercut may proveproblematic in subsequent processing operations.

By contrast, to FIGS. 1A and 1B, FIG. 1C illustrates a cross-sectionalview of a solar cell having a stack of three semiconductor layers for anemitter region, in accordance with an embodiment of the presentdisclosure. Referring to FIG. 1C, a portion of a solar cell includes asubstrate 142. A stack 144 includes three semiconductor layers 144A,144B and 144C disposed above the substrate 142, on a thin dielectriclayer 146 formed on the substrate 142. The lowest layer 144A may beundoped or lightly doped to hinder docent poisoning of the thindielectric layer 146. The uppermost layer 144C may be undoped or lightlydoped to hinder unfavorable interaction with a subsequent laser ablationprocess. The middle layer 144B is doped P-type to provide a P-typeconductivity for the stack 144. A mask layer 148 is disposed on theuppermost semiconductor layer 1440. Following a patterning and wetetching process, the semiconductor stack 144 undercuts mask 128 and,perhaps most significantly, does not form an overhang region within thestack 144. Furthermore, the lowest semiconductor layer 144A does notundercut the middle semiconductor layer 144B, nor does the middlesemiconductor layer 144B undercut the uppermost semiconductor layer144C.

FIG. 2 is a flowchart listing operations in a method of fabricating asolar cell, in accordance with an embodiment of the present disclosure.FIGS. 3A-3G and 3G′ illustrate cross-sectional views of various stagesin the fabrication of a solar cell, as corresponding to the flowchart ofFIG. 2, in accordance with an embodiment of the present disclosure.

Referring to operation 202 of flowchart 200 and to corresponding FIG.3A, a method of fabricating a solar cell includes forming a firstsemiconductor layer 304 above a substrate 302. In an embodiment, thefirst semiconductor layer 304 is formed on a thin dielectric layerformed on the substrate 302 (not shown), while in other embodiments thefirst semiconductor layer 304 is formed directly on the substrate 302.

Referring to operation 204 of flow art 200 and to corresponding FIG. 3B,the method of fabricating the solar cell further includes forming asecond semiconductor layer 306 directly on the first semiconductor layer304. In an embodiment, the second semiconductor layer is a P-typesemiconductor layer.

Referring to operation 206 of flowchart 200 and to corresponding FIG.3C, the method of fabricating the solar cell further includes forming athird semiconductor layer 308 directly on the second (P-type)semiconductor layer 306.

Referring to operation 208 of flowchart 200 and to corresponding FIG.3D, the method of fabricating the solar cell further includes forming amask layer 310 directly on the third semiconductor layer 308. In anembodiment, the mask layer 310 is a bottom-ant-reflective coating (BARC)layer, such as a silicon nitride layer.

Referring to operation 210 of flowchart 200 and to corresponding FIG.3E, the method of fabricating the solar cell further includes patterningthe mask layer 310 to provide a patterned mask layer 310′. In anembodiment, the patterning is performed using a laser ablation process.In another embodiment, the patterning is performed using a lithographyand etch process.

Referring to operation 212 of flowchart 200 and to corresponding FIG.3F, the method of fabricating the solar cell further includes etchingthe third semiconductor layer 308, the second (P-type) semiconductorlayer 306, and the first semiconductor layer 304 to provide asemiconductor structure 316 below the patterned mask layer 310′. Thesemiconductor structure 316 includes a first semiconductor structurelayer 320, a second (P-Type) semiconductor structure layer 322, and athird semiconductor structure layer 324. In an embodiment, as depictedin FIG. 3F, an outermost edge 334 of the third semiconductor structurelayer is laterally recessed (e.g., inward along direction 340) from anoutermost edge 330 of the first semiconductor structure layer 320 by awidth (W). An outermost edge 332 of the second (P-type) semiconductorstructure layer 322 is sloped from the outermost edge 330 of the firstsemiconductor structure layer 324 to the outermost edge 334 of the thirdsemiconductor structure layer 320.

It is to be appreciated that, as is depicted in FIG. 3F, in accordancewith an embodiment of the present disclosure, the above describedrecessing occurs during etching at both sides of the patterned masklayer 310′ FIG. 3E. In an embodiment, etching the third semiconductorlayer 308, the second (P-type) semiconductor layer 306, and the firstsemiconductor layer 304 to provide a semiconductor structure 316includes performing a wet etching process. In one such embodiment, thewet etching process involves use of a wet etchant such as, but notlimited to, an aqueous solution of TMAH or an aqueous solution of KOH.Not to be bound by theory, in accordance with an embodiment of thepresent invention, the sloped portion of the outermost edge 332 of thesecond (P-type) semiconductor structure layer 322 effectively creates amoving triangle that recesses during etching. The moving triangleinhibits undercutting by the first semiconductor layer 320 and preventsformation of an overhang region in the three-layer stack 320, 322 and324. In an embodiment, the substrate 302 is also partially patternedduring the formation of semiconductor structure 316. The partialpatterning of substrate 302 forms trenches 314 in substrate 302, as isdepicted in FIG. 3F.

Furthermore, in an embodiment, the semiconductor structure 316 issubsequently subjected to an annealing process, which may crystallize orfurther crystallize one or more layers of the semiconductor structure316. In one embodiment, an annealing process is performed prior tosubsequent conductive contact formation. In another embodiment, anannealing process is performed during or subsequent to conductivecontact formation. In other embodiments, the semiconductor structure 316is not subsequently subjected substantial annealing conditions. Ineither case, whether or not subjected to subsequent annealingconditions, as used throughout, the semiconductor structure is referredto as semiconductor structure 316 in the embodiments described below.

In an embodiment, referring to FIG. 3G, the patterned mask layer 310′ istrimmed to provide trimmed mask 350 to reduce or altogether removeoverhang over the semiconductor structure 316. The trimmed mask 350 maybe retained on the semiconductor structure 316 in a finalized solarcell, although the trimmed mask may be thinned as compared to theoriginal mask thickness, as is depicted in FIG. 3G. In one suchembodiment, an opening is subsequently formed in the trimmed mask 350,e.g., by laser ablation, through which a conductive contact isultimately formed. In a specific such embodiment, the laser ablatingpenetrates a portion of the third semiconductor structure layer 324 butdoes not penetrate through to the second (P-Type) semiconductorstructure layer 322. In another embodiment, referring to FIG. 3G′, thepatterned mask layer 310′ is altogether removed from the semiconductorstructure 316.

It is to be appreciated that semiconductor structure 316 may be includedin a solar cell structure. In a first exemplary embodiment, referring toFIGS. 3G and 3G′, a solar cell 360 or 360′ includes a substrate 302. Asemiconductor structure 316 is disposed above the substrate 302. Thesemiconductor structure 316 includes a P-type semiconductor layer 322disposed directly on a first semiconductor layer 320. A thirdsemiconductor layer 324 is disposed directly on the P-type semiconductorlayer 322. An outermost edge 334 of the third semiconductor layer 324 islaterally recessed from an outermost edge 334 of the first semiconductorlayer 320 by a width (W). An outermost edge 332 of the P-typesemiconductor layer 322 is sloped from the outermost edge 330 of thefirst semiconductor layer 320 to the outermost edge 334 of the thirdsemiconductor layer 324.

In an embodiment, a conductive contact structure is electricallyconnected to the semiconductor structure 316, examples of which aredescribed below in association with FIG. 4 and FIGS. 5A-5C. In one suchembodiment, the conductive contact structure is disposed in an openingof an anti-reflective coating layer disposed over the semiconductorstructure 316.

In an embodiment, the first semiconductor layer 320 has a thicknessapproximately equal to a thickness of the P-type semiconductor layer 322and approximately equal to a thickness of the third semiconductor layer324. In an embodiment, the P-type semiconductor layer 322 has athickness greater than approximately 10% but less than approximately 90%of a total thickness of the semiconductor structure 316. In anembodiment, none of the first semiconductor layer 320, the P-typesemiconductor layer 322, and the third semiconductor layer 324 has athickness less than approximately 10% of a total thickness of thesemiconductor structure 316. In an embodiment, the first semiconductorlayer 320 is a first intrinsic silicon layer, the P-type semiconductorlayer 322 is a boron-doped silicon layer, and the third semiconductorlayer 324 is a second intrinsic silicon layer. In one such embodiment,the first intrinsic silicon layer 320, the P-type semiconductor, layer322, and the second intrinsic silicon layer 324 are amorphous layers. Inanother such embodiment, the first intrinsic silicon layer 320, theP-type semiconductor layer 322, and the second intrinsic silicon layer324 are polycrystalline layers. In yet another such embodiment, thefirst intrinsic silicon layer 320 and the second intrinsic silicon layer324 each have a total dopant concentration of less than approximately1E18 atoms/cm³, or less than approximately 1E17 atoms/cm³, or less thanapproximately 1E16 atoms/cm³, and the P-type semiconductor layer 322 hasa total boron concentration of greater than approximately 2E19 atoms/cm³or greater than approximately 5E19 atoms/cm³.

In an embodiment, the semiconductor structure 316 is disposed on atunneling dielectric layer disposed on the substrate, examples of whichare described below in association with FIG. 4 and FIGS. 5A-5C. In anembodiment, the semiconductor structure 316 is a P-type emitter regionof the solar cell 360 or 360′.

In a second exemplary embodiment, referring again to FIGS. 3G and 3G′, asolar cell 360 or 360′ includes a substrate 302. A semiconductorstructure 316 is disposed above the substrate 302. The semiconductorstructure 316 includes a second semiconductor layer 322 disposeddirectly on a first semiconductor layer 320. A third semiconductor layer324 is disposed directly on the second semiconductor layer 322. Anoutermost edge 334 of the third semiconductor layer 324 has anon-reentrant profile. An outermost edge 332 of the second semiconductorlayer 322 has a non-reentrant profile extending beyond the outermostedge 334 of the third semiconductor layer 324 by a width (W). Anoutermost edge 330 of the first semiconductor layer 320 has anon-reentrant profile and does not undercut the second semiconductorlayer 322. The non-reentrant profiles 330 and 334 of the first and thirdsemiconductor layers 320 and 325, respectively, are steeper than thenon-reentrant profile 332 of the second semiconductor layer 322.

In an embodiment, a conductive contact structure is electricallyconnected to the semiconductor structure 316, examples of which aredescribed below in association with FIG. 4 and FIGS. 5A-5C. In anembodiment, the second semiconductor layer 322 is a P-type siliconlayer. In one such embodiment, the first 320 and the third 324semiconductor layers each have a total dopant concentration of less thanapproximately 1E18 atoms/cm³, and the P-type silicon layer has a totalboron concentration of greater than approximately 2E19 atoms/cm³.

In another aspect, a solar cell has differentiated T-type and N-typearchitectures. FIG. 4 illustrates a cross-sectional view of a portion ofa back contact solar cell having structurally differentiatedsemiconductor regions, in accordance with an embodiment of the presentdisclosure.

Referring to FIG. 4, a portion of a back contact solar cell 400 includesa substrate 402 having a light-receiving surface 404 and a back surface406. In an embodiment, the substrate 402 is an N-type monocrystallinesilicon substrate. A P-type emitter region 408 is disposed on a firstthin dielectric layer 410 disposed on the back surface 406 of thesubstrate 402. The P-type emitter region includes semiconductorstructure 316 described in association with FIGS. 3G and 3G′. An N-typepolycrystalline silicon emitter region 412 is disposed on a second thindielectric layer 414 disposed on the back surface 406 of the substrate102. A third thin dielectric layer 416 is disposed laterally directlybetween the P-type 408 and N-type 412 polycrystalline silicon emitterregions. A first conductive contact structure 418 is disposed on theP-type emitter region 408. A second conductive contact structure 420 isdisposed on the N-type polycrystalline silicon emitter region 412.

Referring again to FIG. 4, in an embodiment, the solar cell 400 furtherincludes an insulator layer 422 disposed on the P-type emitter region408. The first conductive contact structure 418 is disposed through theinsulator layer 422. Additionally, a portion of the N-typepolycrystalline silicon emitter region 412 overlaps the insulator layer422 but is separate from the first conductive contact structure 418. Inan embodiment, an additional N-type polycrystalline silicon layer 424 isdisposed on the insulator layer 422, and the first conductive contactstructure 418 is disposed through the N-type polycrystalline siliconlayer 424 and through the insulator layer 422, as is depicted in FIG. 4.In one such embodiment, the additional N-type polycrystalline siliconlayer 424 and the N-type polycrystalline silicon emitter region 412 areformed from a same layer that is blanket deposited and then scribed toprovide scribe lines 426 therein.

Referring again to FIG. 4, in an embodiment, the solar cell 400 furtherincludes a recess 428 disposed in the back surface 406 of the substrate402. The N-type polycrystalline silicon emitter region 412 and thesecond thin dielectric layer 414 are disposed in the recess 428. In onesuch embodiment, the recess 428 has a texturized surface, and the N-typepolycrystalline silicon emitter region 412 and the second thindielectric layer 414 are conformal with the texturized surface, as isdepicted in FIG. 4. In an embodiment, then, the P-type emitter region408 and the first thin dielectric layer 410 are disposed on a flatportion of the back surface 406 of the substrate 402, and the N-typepolycrystalline silicon emitter region 412 and the second thindielectric layer 414 are disposed on a texturized portion of the backsurface 406 of the substrate, as is depicted in FIG. 4. It is to beappreciated, however, that other embodiments may not include atexturized surface, or may not include a recess altogether.

Referring again to FIG. 4, in an embodiment, the solar cell 400 furtherincludes a fourth unit thin dielectric layer 430 disposed on thelight-receiving surface 404 of the substrate 402. An N-typepolycrystalline silicon layer 432 is disposed on the fourth thindielectric layer 432. An anti-reflective coating (ARC) layer 434, suchas a layer of silicon nitride, is disposed on the polycrystallinesilicon layer 432. In one such embodiment, as described in greaterdetail below, the fourth thin dielectric layer 432 is formed byessentially the same process used to form the second thin dielectriclayer 414, and the N-type polycrystalline silicon layer 432 is formed byessentially the same process used to form the N-type polycrystallinesilicon emitter region 412.

In an embodiment, the first thin dielectric layer 410, the second thindielectric layer 414 and the third thin dielectric layer 416 includesilicon dioxide. However, in another embodiment, the first thindielectric layer 410 and the second thin dielectric layer 414 includesilicon dioxide, while the third thin dielectric layer 416 includessilicon nitride. In an embodiment, insulator layer 422 includes silicondioxide.

In an embodiment, the first conductive contact structure 418 and thesecond conductive contact structure 420 each include an aluminum-basedmetal seed layer disposed on the P-type 408 and N-type 412 emitterregions, respectively. In one embodiment, each of the first conductivecontact structure 418 and the second conductive contact structure 420further includes a metal layer, such as a copper layer, disposed on thealuminum-based metal seed layer.

In another aspect, a solar cell has non-differentiated P-type and N-typearchitectures. FIGS. 5A-5C illustrate cross-sectional views of variousprocessing operations in a method of fabricating a solar cell, inaccordance with an embodiment of the present disclosure. It is to beappreciated that although the structure of FIG. 3G′ is effectivelyutilized in the FIGS. 5A-5C, the structure of FIG. 3G may instead beincluded in that residual mask material 350 may be retained on thesemiconductor structure 316.

Referring to FIG. 5A, a method of forming contacts for a back-contactsolar cell includes forming a thin dielectric layer 502 on a substrate500.

In an embodiment, the thin dielectric layer 502 is composed of silicondioxide and has a thickness approximately in the range of 5-50Angstroms. In one embodiment, the thin dielectric layer 502 ultimatelyperforms as a tunneling oxide layer in a functioning solar cell. In anexample, the dielectric layer 502 may be an amorphous dielectric layer.An amorphous dielectric layer may be formed by oxidation of a siliconsubstrate (e.g., via PECVD). Oxidation of the silicon layer may involve,for example, plasma oxidation and/or radical oxidation. In anembodiment, substrate 500 is a bulk single-crystal substrate, such as anN-type doped single crystalline silicon substrate. However, in analternative embodiment, substrate 500 includes a polycrystalline siliconlayer disposed on a global solar cell substrate.

Referring again to FIG. 5A, trenches 516 are formed between N-type dopedpolysilicon regions 520 and P-type semiconductor regions 522. The P-typesemiconductor regions 522 are based on the semiconductor structure 316,described in association with FIGS. 3G and 3G′. Portions of the trenches516 can be texturized to have textured features 518, as is also depictedin FIG. 5A.

Referring again to FIG. 5A, an insulating layer 524 is formed above theplurality of N-type doped polysilicon regions 520, the plurality ofP-type semiconductor regions 522, and the portions of substrate 500exposed by trenches 516. In one embodiment, a lower surface of theinsulating layer 524 is formed conformal with the plurality of N-typedoped polysilicon regions 520, the plurality of P-type semiconductorregions 522, and the exposed portions of substrate 500, while an uppersurface of insulating layer 524 is substantially flat, as depicted inFIG. 5A.

Referring to FIG. 5B, a plurality of contact openings 526 is formed inthe insulating layer 524. The plurality of contact openings 526 provideexposure to the plurality of N-type doped polysilicon regions 520 and tothe plurality of P-type semiconductor regions 522. In one embodiment,the plurality of contact openings 526 is formed by laser ablation. Inone embodiment, the contact openings 526 to the N-type doped polysiliconregions 520 have substantially the same height as the contact openingsto the P-type semiconductor regions 522, as depicted in FIG. 5B.

Referring to FIG. 5C, the method of forming, contacts for theback-contact solar cell further includes forming conductive contacts 528in the plurality of contact openings 526 and coupled to the plurality ofN-type doped polysilicon regions 520 and to the plurality of P-typesemiconductor regions 522. In an embodiment, conductive contacts 528 areformed on or above a surface of a bulk N-type silicon substrate 500opposing a light receiving surface 501 of the bulk N-type siliconsubstrate 500. In a specific embodiment, the conductive contacts areformed on regions (522/520) above the surface of the substrate 500, asdepicted in FIG. 5C. The fabrication of the conductive contacts caninvolve use of one or more sputtered, plated or bonded conductivelayers.

In an embodiment, the plurality of conductive contacts 528 are formed byforming a metal seed layer and then performing an electroplatingprocess. In one embodiment, the seed layer is formed by a deposition,lithographic, and etch approach. A metal layer is then electroplated onthe patterned metal seed layer. In another embodiment, the plurality ofconductive contacts 528 is formed by printing a paste. The paste may becomposed of a solvent and the aluminum/silicon (Al/Si) alloy particles.A subsequent electroplating or electroless-plating process may then beperformed.

In an embodiment, the plurality of conductive contacts 52 is formed byfirst forming a metal seed layer and then forming a metal foil layer. Inan embodiment, the metal seed layer includes a layer having a thicknessapproximately in the range of 0.05 to 20 microns and includes aluminumin an amount greater than approximately 90 atomic %. In an embodiment,the metal seed layer is deposited as a blanket layer which is laterpatterned. In another embodiment, the metal seed layer is deposited aspatterned layer. In one such embodiment, the patterned metal seed layeris deposited by printing the patterned metal seed layer.

In an embodiment, the metal foil is an aluminum (Al) foil having athickness approximately in the range of 5-100 microns. In oneembodiment, the Al foil is an aluminum alloy foil including aluminum andsecond element such as, but not limited to, copper, manganese, silicon,magnesium, zinc, tin, lithium, or combinations thereof. In oneembodiment, the Al foil is a temper grade foil such as, but not limitedto, F-grade (as fabricated), O-grade (full soft), H-grade (strainhardened) or T-grade (heat treated). In one embodiment, the aluminumfoil is an anodized aluminum foil. In another embodiment, a metal wireformed on the metal seed layer. In one such embodiment, the wire is analuminum (Al) or copper (Cu) wire. In either case, the metal foil orwire may be welded to the metal seed layer. In the case of a metal foillayer, the metal foil may subsequently be patterned, e.g., by laserablation and/or etching. Such patterning may position metal foilportions at regions in alignment with locations between the plurality ofsemiconductor regions 520 and 522.

Although certain materials are described specifically with reference toabove described embodiments, some materials may be readily substitutedwith others with such embodiments remaining within the spirit and scopeof embodiments of the present disclosure. For example, in an embodiment,a different material substrate, such as a group III-V materialsubstrate, can be used instead of a silicon substrate. Furthermore, itis to be understood that, where the ordering of N+ and then P+ typedoping is described specifically for emitter regions on a back surfaceof a solar cell, other embodiments contemplated include the oppositeordering of conductivity type, e.g., P+ and then N+ type dopingrespectively. Additionally, although reference is made significantly toback contact solar cell arrangements, it is to be appreciated thatapproaches described herein may have application to front contact solarcells as well. In other embodiments, the above described approaches canbe applicable to manufacturing of other than solar cells. For example,manufacturing of light emitting diode (LEDs) may benefit from approachesdescribed herein.

Thus, tri-layer semiconductor stacks for patterning features on solarcells, and the resulting solar cells, have been disclosed.

Although specific embodiments have been described above, theseembodiments are not intended to limit the scope of the presentdisclosure, even where only a single embodiment is described withrespect to a particular feature. Examples of features provided in thedisclosure are intended to be illustrative rather than restrictiveunless stated otherwise. The above description is intended to cover suchalternatives, modifications, and equivalents as would be apparent to aperson skilled in the art having the benefit of the present disclosure.

The scope of the present disclosure includes any feature or combinationof features disclosed herein (either explicitly or implicitly), or anygeneralization thereof, whether or not it mitigates any or all of theproblems addressed herein. Accordingly, new claims may be formulatedduring prosecution of the present application (or an applicationclaiming priority thereto) to any such combination of features. Inparticular, with reference to the appended claims, features fromdependent claims may be combined with those of the independent claimsand features from respective independent claims may be combined in anyappropriate manner and not merely in the specific combinationsenumerated in the appended claims.

What is claimed is:
 1. A back contact solar cell, comprising: asubstrate; a semiconductor structure disposed above the substrate, thesemiconductor structure comprising a P-type semiconductor layer disposeddirectly on a first semiconductor layer, and a third semiconductor layerdisposed directly on the P-type semiconductor layer, wherein anoutermost edge of the third semiconductor layer is laterally recessedfrom an outermost edge of the first semiconductor layer by a width, andwherein an outermost edge of the P-type semiconductor layer is slopedfrom the outermost edge of the first semiconductor layer to theoutermost edge of the third semiconductor layer; and a conductivecontact structure electrically connected to the semiconductor structure,wherein the semiconductor structure is vertically stacked with the firstsemiconductor layer between the P-type semiconductor layer and thesubstrate, the P-type semiconductor layer between the first and thirdsemiconductor layers, and the third semiconductor layer between theP-type semiconductor layer and the conductive contact structure; whereinthe first semiconductor layer is a first intrinsic silicon layer, theP-type semiconductor layer is a boron-doped silicon layer, and the thirdsemiconductor layer is a second intrinsic silicon layer.
 2. The backcontact solar cell of claim 1, wherein the first semiconductor layer hasa thickness approximately equal to a thickness of the P-typesemiconductor layer and approximately equal to a thickness of the thirdsemiconductor layer.
 3. The back contact solar cell of claim 1, whereinthe P-type semiconductor layer has a thickness greater thanapproximately 10% but less than approximately 90% of a total thicknessof the semiconductor structure.
 4. The back contact solar cell of claim1, wherein none of the first semiconductor layer, the P-typesemiconductor layer, and the third semiconductor layer has a thicknessless than approximately 10% of a total thickness of the semiconductorstructure.
 5. The back contact solar cell of claim 1, wherein the firstintrinsic silicon layer, the P-type semiconductor layer, and the secondintrinsic silicon layer are amorphous layers.
 6. The back contact solarcell of claim 1, wherein the first intrinsic silicon layer, the P-typesemiconductor layer, and the second intrinsic silicon layer arepolycrystalline layers.
 7. The back contact solar cell of claim 1,wherein the first intrinsic silicon layer and the second intrinsicsilicon layers each have a total dopant concentration of less thanapproximately 1E18 atoms/cm³, and the P-type semiconductor layer has atotal boron concentration of greater than approximately 2E19 atoms/cm³.8. The back contact solar cell of claim 1, wherein the semiconductorstructure is disposed on a tunneling dielectric layer disposed on thesubstrate.
 9. The back contact solar cell of claim 1, wherein theconductive contact structure is disposed in an opening of ananti-reflective coating layer disposed over the semiconductor structure.10. The back contact solar cell of claim 1, wherein the semiconductorstructure is a P-type emitter region of the solar cell.
 11. A backcontact solar cell, comprising: a substrate; a semiconductor structuredisposed above the substrate, the semiconductor structure comprising asecond semiconductor layer disposed directly on a first semiconductorlayer, and a third semiconductor layer disposed directly on the secondsemiconductor layer, wherein an outermost edge of the thirdsemiconductor layer has a non-reentrant profile, an outermost edge ofthe second semiconductor layer has a non-reentrant profile extendingbeyond the outermost edge of the third semiconductor layer by a width,and an outermost edge of the first semiconductor layer has anon-reentrant profile and does not undercut the second semiconductorlayer, and wherein the non-reentrant profiles of the first and thirdsemiconductor layers are steeper than the non-reentrant profile of thesecond semiconductor layer; and a conductive contact structureelectrically connected to the semiconductor structure, wherein thesemiconductor structure is vertically stacked with the firstsemiconductor layer between the second semiconductor layer and thesubstrate, the second semiconductor layer between the first and thirdsemiconductor layers, and the third semiconductor layer between thesecond semiconductor layer and the conductive contact structure; whereinthe first semiconductor layer is a first intrinsic silicon layer, thesecond semiconductor layer is a P-type boron-doped silicon layer, andthe third semiconductor layer is a second intrinsic silicon layer. 12.The back contact solar cell of claim 11, wherein the first and the thirdsemiconductor layers each have a total dopant concentration of less thanapproximately 1E18 atoms/cm³, and the P-type silicon layer has a totalboron concentration of greater than approximately 2E19 atoms/cm³.